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Samsung - Memory - 256 MB - RIMM 184-PIN - RDRAM - 800 MHz / PC800 - 2.5 V - ECC at Backoffice
Samsung - Memory - 256 MB - RIMM 184-PIN - RDRAM - 800 MHz / PC800 - 2.5 V - ECC
MR18R1628DF0-CM8
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This product is no longer available.
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The RIMM module is a general-purpose high- performance memory module suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required. The RIMM module consists of 256/288Mb Direct RDRAM devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 16 or 18 bits. The use of Rambus Signaling Level (RSL) technology permits up to 1066 MHz transfer rates while using conventional system and board design technologies. RDRAM devices are capable of sustained data transfers up to at 0.94 ns per two bytes 7.5ns per 16 bytes. The RDRAM architecture enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed, memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The RDRAM's 32-bank architecture supports up to four simultaneous transactions per device.| Product Description | Samsung memory - 256 MB - RIMM 184-PIN - RDRAM | | Storage Capacity | 256 MB | | Upgrade Type | Generic | | Technology | RDRAM (RAMBUS) | | Form Factor | RIMM 184-PIN | | Memory Speed | 800 MHz ( PC800 ) | | Data Integrity Check | ECC | | Features | 16K refresh | | Supply Voltage | 2.5 V | | Lead Plating | Gold |
GENERAL |
| Storage Capacity | 256 MB |
| Upgrade Type | Generic |
MEMORY |
| Type | DRAM |
| Technology | RDRAM (RAMBUS) |
| Form Factor | RIMM 184-PIN |
| Memory Speed | 800 MHz ( PC800 ) |
| Access Time | 40 ns |
| Data Integrity Check | ECC |
| RAM Features | 16K refresh |
| Module Configuration | 128 x 18 |
| Supply Voltage | 2.5 V |
| Lead Plating | Gold |
EXPANSION / CONNECTIVITY |
| Compatible Slots | 1 x memory - RIMM 184-PIN |
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